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Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication

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Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication

Auteurs : RBID : Pascal:02-0019691

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Abstract

Controlled crystallization of amorphous films through nanoprinting is a novel pattern transfer technique that has been demonstrated for submicron features. Amorphous Ge and indium tin oxide (ITO) films are investigated for their suitability as a pattern transfer layer by direct contact with a patterned printhead. The printhead is heated and brought into contact with the amorphous film, transforming the contacted areas from amorphous to crystalline material. After crystallization, the amorphous regions are selectively etched away, leaving the desired pattern in crystalline material. Theoretical modeling suggests that this technique can be used for pattern transfer of features less than 50 nm. © 2001 American Vacuum Society.

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<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication</title>
<author>
<name sortKey="Cabral, M J" uniqKey="Cabral M">M. J. Cabral</name>
<affiliation wicri:level="2">
<inist:fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2">
<inist:fA14 i1="03">
<s1>Department of Physics, University of Virginia, Charlottesville, Virginia 22904</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Lye, W K" uniqKey="Lye W">W. K. Lye</name>
<affiliation wicri:level="2">
<inist:fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Bean, J C" uniqKey="Bean J">J. C. Bean</name>
<affiliation wicri:level="2">
<inist:fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Reed, M L" uniqKey="Reed M">M. L. Reed</name>
<affiliation wicri:level="2">
<inist:fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Chraska, T" uniqKey="Chraska T">T. Chraska</name>
<affiliation wicri:level="2">
<inist:fA14 i1="02">
<s1>Department of Material Science, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Material Science, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Mesarovic, S Dj" uniqKey="Mesarovic S">S. Dj. Mesarovic</name>
<affiliation wicri:level="2">
<inist:fA14 i1="02">
<s1>Department of Material Science, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Material Science, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Hull, R" uniqKey="Hull R">R. Hull</name>
<affiliation wicri:level="2">
<inist:fA14 i1="02">
<s1>Department of Material Science, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Material Science, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
<author>
<name sortKey="Phillips, A B" uniqKey="Phillips A">A. B. Phillips</name>
<affiliation wicri:level="2">
<inist:fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName>
<region type="state">Virginie</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">02-0019691</idno>
<date when="2001-11">2001-11</date>
<idno type="stanalyst">PASCAL 02-0019691 AIP</idno>
<idno type="RBID">Pascal:02-0019691</idno>
<idno type="wicri:Area/Main/Corpus">010213</idno>
<idno type="wicri:Area/Main/Repository">00FC60</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">1071-1023</idno>
<title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title>
<title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Crystallization</term>
<term>Experimental study</term>
<term>Measuring methods</term>
<term>Nanotechnology</term>
<term>Printing</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>8540H</term>
<term>Méthode mesure</term>
<term>Etude expérimentale</term>
<term>Nanotechnologie</term>
<term>Impression</term>
<term>Cristallisation</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr">
<term>Nanotechnologie</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">Controlled crystallization of amorphous films through nanoprinting is a novel pattern transfer technique that has been demonstrated for submicron features. Amorphous Ge and indium tin oxide (ITO) films are investigated for their suitability as a pattern transfer layer by direct contact with a patterned printhead. The printhead is heated and brought into contact with the amorphous film, transforming the contacted areas from amorphous to crystalline material. After crystallization, the amorphous regions are selectively etched away, leaving the desired pattern in crystalline material. Theoretical modeling suggests that this technique can be used for pattern transfer of features less than 50 nm. © 2001 American Vacuum Society.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>1071-1023</s0>
</fA01>
<fA02 i1="01">
<s0>JVTBD9</s0>
</fA02>
<fA03 i2="1">
<s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0>
</fA03>
<fA05>
<s2>19</s2>
</fA05>
<fA06>
<s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>CABRAL (M. J.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>LYE (W. K.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>BEAN (J. C.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>REED (M. L.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>CHRASKA (T.)</s1>
</fA11>
<fA11 i1="06" i2="1">
<s1>MESAROVIC (S. Dj.)</s1>
</fA11>
<fA11 i1="07" i2="1">
<s1>HULL (R.)</s1>
</fA11>
<fA11 i1="08" i2="1">
<s1>PHILLIPS (A. B.)</s1>
</fA11>
<fA14 i1="01">
<s1>Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>Department of Material Science, University of Virginia, Charlottesville, Virginia 22904</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="03">
<s1>Department of Physics, University of Virginia, Charlottesville, Virginia 22904</s1>
</fA14>
<fA20>
<s1>2793-2796</s1>
</fA20>
<fA21>
<s1>2001-11</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>11992 B</s2>
</fA43>
<fA44>
<s0>8100</s0>
<s1>© 2002 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1">
<s0>02-0019691</s0>
</fA47>
<fA60>
<s1>P</s1>
<s2>C</s2>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0>
</fA64>
<fA66 i1="01">
<s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>Controlled crystallization of amorphous films through nanoprinting is a novel pattern transfer technique that has been demonstrated for submicron features. Amorphous Ge and indium tin oxide (ITO) films are investigated for their suitability as a pattern transfer layer by direct contact with a patterned printhead. The printhead is heated and brought into contact with the amorphous film, transforming the contacted areas from amorphous to crystalline material. After crystallization, the amorphous regions are selectively etched away, leaving the desired pattern in crystalline material. Theoretical modeling suggests that this technique can be used for pattern transfer of features less than 50 nm. © 2001 American Vacuum Society.</s0>
</fC01>
<fC02 i1="01" i2="X">
<s0>001D03F17</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>8540H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Méthode mesure</s0>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Measuring methods</s0>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Experimental study</s0>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Nanotechnologie</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Nanotechnology</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Impression</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Printing</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Cristallisation</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Crystallization</s0>
</fC03>
<fN21>
<s1>001</s1>
</fN21>
<fN47 i1="01" i2="1">
<s0>0151M000411</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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